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FGPF7N60LSD 600V, 7A Low Saturation IGBT CO-PAK
January 2006
FGPF7N60LSD
600V, 7A Low Saturation IGBT CO-PAK
Features
* Low saturation voltage : VCE(sat) = 1.4 V @ IC = 7A * High input impedance * CO-PAK, IGBT with FRD : trr = 50 ns (typ.)
Description
Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provides very low conduction and switching losses.The device is designed for Lamp applications where very low On-Voltage Drop is a required feature.
Applications
Lamp applications (Hallogen Dimmer)
C
G
TO-220F 1.Gate 2.Collector 3.Emitter
E
Absolute Maximum Ratings
Symbol
VCES VGES IC ICM (1) IF I FM PD TJ Tstg TL
Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature
Description
Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8" from Case for 5 Seconds @ TC = 25C @ TC = 100C @ TC = 100C @ TC = 25C @ TC = 100C
FGPF7N60LSD
600 20 14 7 21 12 60 45 18 -55 to +150 -55 to +150 300
Units
V V A A A A A W W C C C
Thermal Characteristics
Symbol
RJC (IGBT) RJC(DIODE) RJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient (PCB Mount) (2)
Typ.
----
Max.
2.8 4.5 62.5
Units
C/W C/W C/W
Notes : (2) Mounted on 1" squre PCB (FR4 or G-10 Material)
(c)2006 Fairchild Semiconductor Corporation
1
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FGPF7N60LSD Rev. A
FGPF7N60LSD 600V, 7A Low Saturation IGBT CO-PAK
Package Marking and Ordering Information
Device Marking
FGPF7N60LSD
Device
FGPF7N60LSDTU
Package
TO-220F
Packaging Type
Rail /Tube
Qty per Tube
50ea
Max Qty per Box
1,000ea
Electrical Characteristics of the IGBT
Symbol Off Characteristics BVCES BVCES/ TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown] Voltage Collector Cut-Off Current G-E Leakage Current Parameter
TC = 25C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
VGE = 0V, IC = 250uA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V
600 ----
-0.6 ---
--250 100
V V/C uA nA
On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 7mA, VCE = VGE IC = 7A, VGE = 15V 5.0 ---6.5 1.4 1.47 1.85 8.0 2.0 --V V V V
IC = 7A, VGE = 15V, TC = 125C IC = 14 A, VGE = 15V
Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---510 55 15 ---pF pF pF
Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Le Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance VCE = 300 V, IC = 7A, VGE = 15V Measured 5mm from PKG VCC = 300 V, IC = 7 A, RG =470, VGE = 15V, Inductive Load, TC = 125C VCC = 300 V, IC = 7A, RG = 470, VGE = 15V, Inductive Load, TC = 25C ------------------120 44 410 2320 0.27 3.8 4.07 105 50 420 3745 0.22 5.94 6.16 --535 3480 --6.1 -------ns ns ns ns uJ mJ mJ ns ns ns ns uJ mJ mJ nC nC nC nH
24 4 10 7.5
36 6 15 --
FGPF7N60LSD Rev. A
2
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FGPF7N60LSD 600V, 7A Low Saturation IGBT CO-PAK
Electrical Characteristics of DIODE T
Symbol
VFM
C
= 25C unless otherwise noted
Parameter
Diode Forward Voltage IF = 7A Diode Reverse Recovery Time
Test Conditions
TC = 25C TC = 100C TC = 25C TC = 100C
Min.
---------
Typ.
1.65 1.58 50 58 2.5 3.3 62.5 95.7
Max.
2.1 -65 -3.75 -122 --
Units
V
trr
ns
Irr
Diode Peak Reverse Recovery Current
IF = 7A dI/dt = 200 A/s
TC = 25C TC = 100C TC = 25C TC = 100C
A
Qrr
Diode Reverse Recovery Charge
nC
FGPF7N60LSD Rev. A
3
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FGPF7N60LSD 600V, 7A Low Saturation IGBT CO-PAK
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
40
20V 15V
Figure 2. Typical Saturation Voltage Characteristics
o
TC = 25 C 12V
40
Com m on Em itter V Ge = 15V T c = 25 C o T c = 125 C
o
Collector Current, IC [A]
30
20
10V
Collector Current, IC [A]
8
30
20
10
V G E= 8 V
10
0 0 2 4 6 C o lle c to r-E m itte r V o lta ge , V C E [V ]
0 0 2 4 Collector-Emitter Voltage, V CE [V] 6
Figure 3. Typical Saturation Voltage Characteristics
2 .2
Figure 4. Load Current vs Frequency
15
Collector-Emitter Voltage, VCE [V]
2 .0 1 .8 1 .6
14A
Vcc = 300V load Current : peak of square wave Duty cycle : 50% o Tc = 100 C Power Dissipation = 9W
7A
1 .4 1 .2 1 .0 0 25 50 75 100
o
Load Current [A]
10
5
I c = 3 .5 A
125
150
0 0.1 1 10 100 1000
C a se Te m pe ra ture , T C ( C )
Frequency [kHz]
Figure 5. Saturation Voltage vs. Vge
10
Com m on Em itter o T C = 25 C
Figure 6. Saturation Voltage vs. Vge
10
Com m on Em itter o T C = 125 C
[V]
[V] Collector - Emitter Voltage, V
CE
8
Collector - Emitter Voltage, V
CE
8
6
6
4
4
2
2
5
10
15
20
5
Gate - Emitter Voltage, V G E [V]
10 15 Gate - Em itter Voltage, V G E [V]
20
FGPF7N60LSD Rev. A
4
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FGPF7N60LSD 600V, 7A Low Saturation IGBT CO-PAK
Typical Performance Characteristics
Figure 7. Capacitance Characteristics
1000
(Continued)
Figure 8. Turn-On Characteristics vs. Gate Resistance
Com m on Em itter V GE = 0V, f = 1MHz T C = 25 C Ciss
o
800
td(on)
Capacitance [pF]
Switching Time [ns]
600
100
tr
400
Coss
Crss 200
Com mon Em itter V CC = 300V, V GE = +/-15V IC = 7A T C = 25 C
o
0 1
T C = 125 C
o
Collector-Emitter Voltage, V CE [V]
10
10 100 1000
Gate Resistance, R G [ ]
Figure 9. Turn-Off Characteristics vs. Gate Resistance
Figure 10. Switching Loss vs. Gate Resistance
1000
tf
1000
Eoff
Switching Time [ns]
td(off)
Switching Loss [uJ]
100
Common Emitter V CC = 300V, V GE = +/-15V IC = 7A T C = 25 C T C = 125 C 100 1000
o o
Eon 100
Common Emitter V CC=300V,V GE=+/-15V IC=7A T C=25 C T C=125 C 100 1000
o o
Gate Resistance, R G [ ]
Gate Resistance, R G []
Figure 11. Turn-On Characteristics vs. Collector Current
Figure 12. Turn-Off Characteristics vs. Collector Current
td(on)
1000
Switching Time [ns]
Switching Time [ns]
tf
100
tr
td(off) Common Emitter VGE = +/-15V, RG = 470 TC = 25 C TC = 125 C
o o
Common Emitter VGE = +/-15V, RG = 470 T C = 25 C T C = 125 C 4 6 8 10 12 14 16
o o
100
4
6
8
10
12
14
16
Collector Current, IC [A]
Collector Current, IC [A]
FGPF7N60LSD Rev. A
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FGPF7N60LSD 600V, 7A Low Saturation IGBT CO-PAK
Typical Performance Characteristics
(Continued)
Figure 13. Switching Loss vs. Collector Current
Figure 14. Gate Charge Characteristics
15 Common Emitter R L = 43 ohm T C = 25 C Vcc = 100V 10
o
Gate-Emitter Voltage, VGE [V]
200V
300V
Eoff
Switching Loss [uJ]
1000
Eon
5
Common Emitter V GE = +/-15V, RG = 470 T C = 25 C 100 4 8 T C = 125 C 12 16
o o
0 0 4
Collector Current, IC [A]
Gate Charge, Q g [nC]
8
12
16
20
24
Figure 15. SOA Characteristics
100 Ic MAX (Pulsed) 10 Ic MAX (Continuous) 50s 100s 1ms 1 DC Operation
Collector Current, Ic [A]
0.1
0.01 0.1
Single Nonrepetitive o Pulse Tc = 25 C Curves must be derated linearly with increase in temperature 1 10 100 1000
Collector - Emitter Voltage, V CE [V]
Figure 16. Transient Thermal Impedance of IGBT
10
Thermal Response [Zthjc]
1
0 .5 0 .2 0 .1
0 .1
0 .0 5 0 .0 2 0 .0 1 s in g le p u ls e
Pdm t1 t2 Duty factor D = t1 / t2 Peak Tj = Pdm x Zthjc + TC
0 .0 1 1 E -5
1 E -4
1 E -3
0 .0 1
0 .1
1
10
R e cta ngula r P ulse D ura tio n [se c]
FGPF7N60LSD Rev. A
6
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FGPF7N60LSD 600V, 7A Low Saturation IGBT CO-PAK
Typical Performance Characteristics
Figure 17. Forward Voltage Characteristics
(Continued)
Figure 18. Reverse Recovery Current
3.0
10
Reverse Recovery Current , Irr [A]
di/dt=200A /us 2.5
Forward Current , IF [A]
1
T C = 100 C
o
o
2.0 di/dt=100A /us 1.5
T C = 25 C
0.1 0.5 1.0 1.5 2.0 2.5 3.0
1.0 2 4 6 8 10 12 14
Forward Voltage , VF [V]
Forward C urrent , IF [A ]
Figure 19. Stored Charge
80
Figure 20. Reverse Recovery Time
60
Reverse Recovery Charge , Qrr [nC]
Reverse Recovery Time , trr [ns]
70
60
50
di/dt=100A/us
di/dt=200A/us
50
40
di/dt=100A/us
40
di/dt=200A/us
30 2 4 6 8 10 12 14
30 2 4 6 8 10 12 14
Forward Current , IF [A]
Forward Current , IF [A]
FGPF7N60LSD Rev. A
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FGPF7N60LSD 600V, 7A Low Saturation IGBT CO-PAK
Mechanical Dimensions
TO-220F
3.30 0.10 10.16 0.20 (7.00) o3.18 0.10 2.54 0.20 (0.70)
6.68 0.20
15.80 0.20
(1.00x45)
MAX1.47 9.75 0.30 0.80 0.10
(3 0 )
0.35 0.10 2.54TYP [2.54 0.20]
#1 2.54TYP [2.54 0.20] 4.70 0.20
0.50 -0.05
+0.10
2.76 0.20
9.40 0.20
Dimensions in Millimeters
FGPF7N60LSD Rev. A
8
15.87 0.20
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FGPF7N60LSD 600V, 7A Low Saturation IGBT CO-PAK
TRADEMARKS
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FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I17
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
9 FGPF7N60LSD Rev. A
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